| PART |
Description |
Maker |
| BFS483 |
RF-Bipolar - NPN Silicon RF dual transistor array (2xBFR183W) for low noise, high gain broadband amplifiers
NPN Silicon RF Transistor
|
Infineon Technologies AG
|
| BFS17W BFS17W. |
RF-Bipolar - For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA
RF-Bipolar NPN Type Transistors with transition frequency from 1 to 6 GHz
NPN Silicon RF Transistor
|
INFINEON[Infineon Technologies AG]
|
| BFY81DCSM |
Dual Bipolar NPN Devices
|
Semelab
|
| SUT041 |
Dual NPN Bipolar transistor
|
KODENSHI KOREA CORP.
|
| BFY81DCSM |
Dual Bipolar NPN Devices.
|
Seme LAB
|
| SUT161G |
Dual NPN Bipolar transistor
|
KODENSHI KOREA CORP.
|
| SUT121G |
Dual NPN Bipolar transistor
|
KODENSHI KOREA CORP.
|
| 2N4269S |
BIPOLAR NPN SILICON TRANSISTOR
|
Seme LAB
|
| NJT4031N NJT4031NT1G NJT4031NT3G |
NPN SOT223 40V/3A Low VCE(sat) Power Transistor
Bipolar Power Transistors NPN Silicon
|
ON Semiconductor
|
| BFT58DCSM |
Dual Bipolar NPN Devices in a hermetically sealed
|
Seme LAB
|
| 2N2453DCSM |
Dual Bipolar NPN Devices in a hermetically sealed
|
Seme LAB
|
